| PART |
Description |
Maker |
| IRF540PBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRF1010EPBF |
HEXFETPower MOSFET ㈢的HEXFET功率MOSFET
|
International Rectifier, Corp.
|
| IRF7328PBF |
HEXFETPower MOSFET ㈢的HEXFET功率MOSFET
|
International Rectifier, Corp.
|
| PVDZ172 |
HEXFETPower MOSFET Photovoltaic Relay Single Pole, Normally Open 0-60V DC, 1.5A
|
International Rectifier
|
| AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET
HEXFET庐 Power MOSFET
HEXFET? Power MOSFET
42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
|
International Rectifier
List of Unclassifed Man...
|
| SI4410DYPBF SI4410DYTRPBF |
N-Channel MOSFET
10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA LEAD FREE, SO-8
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
|
Hypertronics, Corp.
International Rectifier
|
| BR211-280 BR211 BR211-140 BR211-160 BR211-180 BR21 |
Breakover diodes 314 V, SYMMETRICAL BOD
MOSFET N-CH 500V 3A TO-220
MOSFET N-CH 600V 2A TO-220
MOSFET N-CH 1.2KV 3A TO-220AB
MOSFET N-CH 500V 1A TO-220
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PIC18F4520TI_SO PIC18F2420TE_PSTQP PIC18F2420TE/PS |
MOSFET N-CH 70V 76A TO-247AD 28/40/44-Pin增强型闪存微控制器位A / D和纳瓦技10
CABLE ASSEMBLY; MHV MALE TO SHV PLUG ; 93 OHM, RG62A/U COAX; 12" CABLE LENGTH 28/40/44-Pin增强型闪存微控制器位A / D和纳瓦技0
28/40/44-Pin Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology 28/40/44-Pin增强型闪存微控制器位A / D和纳瓦技0
MOSFET N-CH 800V 27A TO-264AA
MOSFET N-CH 200V 58A TO-247AD
MOSFET N-CH 200V 120A TO-264AA
ADAPTER BNC R/A FEMALE-MALE
Din Rail; External Width:7.5mm; Length:2m; Body Material:Steel
MOSFET N-CH 70V 110A TO-264AA
MOSFET N-CH 900V 6A TO-247AD
MOSFET N-CH 600V 48A TO-264
MOSFET N-CH 500V 48A TO-264AA
MOSFET N-CH 600V 44A TO-264AA
MOSFET N-CH 100V 180A TO-264AA
Connector; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
|
Microchip Technology, Inc.
Microchip Technology Inc.
|
| VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| IXTA10N60P IXTP10N60P IXTI10N60P |
MOSFET N-CH 600V 10A D2-PAK 10 A, 600 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
PolarHV Power MOSFET
|
Infineon Technologies AG
IXYS CORP
IXYS Corporation
|
